advanced power n-channel enhancement mode electronics corp. power mosfet low gate charge bv dss 30v simple drive requirement r ds(on) 17m fast switching i d 40a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value unit rthj-c thermal resistance junction-case max. 2.5 /w rthj-a thermal resistance junction-ambient max. 62 /w data & specifications subject to change without notice AP40N03GP parameter rating pb free plating product drain-source voltage 30 gate-source voltage continuous drain current, v gs @ 10v 40 continuous drain current, v gs @ 10v 30 pulsed drain current 1 169 operating junction temperature range -55 to 150 linear derating factor 0.4 storage temperature range total power dissipation 50 -55 to 150 200218032 thermal data parameter the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-220 package is universally preferred for all commercial- industrial applications and suited for low voltage applications such as dc/dc converters and high efficiency switching circuits. 20 g d s to-220 g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.037 -v/ r ds(on) static drain-source on-resistance v gs =10v, i d =20a - 14 17 m v gs =4.5v, i d =16a - 20 23 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =20a - 26 - s i dss drain-source leakage current (t j =25 o c) v ds =30v, v gs =0v - - 1 ua drain-source leakage current (t j =150 o c) v ds =24v,v gs =0v - - 25 ua i gss gate-source leakage v gs =-- na q g total gate charge 2 i d =20a - 17 - nc q gs gate-source charge v ds =24v - 3 - nc q gd gate-drain ("miller") charge v gs =5v - 10 - nc t d(on) turn-on delay time 2 v ds =15v - 7.2 - ns t r rise time i d =20a - 60 - ns t d(off) turn-off delay time r g =3.3 , v gs =10v - 22.5 - ns t f fall time r d =0.75 -10- ns c iss input capacitance v gs =0v - 800 - pf c oss output capacitance v ds =25v - 380 - pf c rss reverse transfer capacitance f=1.0mhz - 133 - pf source-drain diode symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) v d =v g =0v , v s =1.3v - - 40 a i sm pulsed source current ( body diode ) 1 - - 169 a v sd forward on voltage 2 t j =25 , i s =40a, v gs =0v - - 1.3 v notes: 1.pulse width limited by safe operating area. 2.pulse width < 300us , duty cycle < 2%. AP40N03GP 100 20v
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature AP40N03GP 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) v g =10v i d =20a 0 50 100 150 0123456789 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c v g =3.0v v g =4.0v v g =6.0v v g =8.0v v g =10v 0 50 100 150 012345678910 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c v g =6.0v v g =3.0v v g =4.0v v g =8.0v v g =10v 12 14 16 18 20 22 24 26 28 34567891011 v gs (v) r ds(on) (m ) i d =20a t c =25 o c
fig 5. maximum drain current v.s. fig 6. typical power dissipation case temperature fig 7. maximum safe operating area fig 8. effective transient thermal impedance AP40N03GP 0 5 10 15 20 25 30 35 40 45 50 25 50 75 100 125 150 t c , case temperature ( o c) i d , drain current (a) 1 10 100 1000 1 10 100 v ds (v) i d (a) t c =25 o c single pulse 10us 100us 1ms 10ms 100ms 0 10 20 30 40 50 60 0 50 100 150 t c ,case temperature ( o c) p d (w) 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty=0.5 single pulse
fig 9. gate charge characteristics fig 10. typical capacitance characteristics fig 11. forward characteristic of fig 12. gate threshold voltage v.s. reverse diode junction temperature AP40N03GP 0 1 2 3 -50 0 50 100 150 t j , junction temperature ( o c ) v gs(th) (v) 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 40 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =24v v ds =20v v ds =16v i d =20a 0.01 0.1 1 10 100 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 v sd (v) i s (a) t j = 25 o c t j = 150 o c 100 1000 10000 1 5 9 1317212529 v ds (v) c (pf) f =1.0mhz ciss coss crss
AP40N03GP fig 13. switching time circuit fig 14. switching time waveform fig 15. gate charge circuit fig 16. gate charge waveform t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 5v q gs q gd q g charge 0.5x rated v ds to the oscilloscope - + 10 v d g s v ds v gs r g r d 0.8 x rated v ds to the oscilloscope - + d g s v ds v gs i d i g 1~ 3 m a
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